Corrigendum: Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy. (2017)
Attributed to:
Molecular Beam Epitaxy of Boron Nitride and Graphene layers and heterostructures.
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1038/srep46799
PubMed Identifier: 28480901
Publication URI: http://europepmc.org/abstract/MED/28480901
Type: Journal Article/Review
Volume: 7
Parent Publication: Scientific reports
ISSN: 2045-2322