High-temperature molecular beam epitaxy of hexagonal boron nitride layers (2018)

First Author: Cheng T
Attributed to:  Strain-engineered graphene: growth, modification and electronic properties funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1116/1.5011280

Publication URI: http://dx.doi.org/10.1116/1.5011280

Type: Journal Article/Review

Parent Publication: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Issue: 2