InGaAs/AlAs Resonant Tunneling Diodes for THz Applications: An Experimental Investigation (2018)
Attributed to:
Future Compound Semiconductor Manufacturing Hub
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/jeds.2018.2797951
Publication URI: http://dx.doi.org/10.1109/jeds.2018.2797951
Type: Journal Article/Review
Parent Publication: IEEE Journal of the Electron Devices Society