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Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy (2017)

First Author: Vuong T

Attributed to: Strain-engineered graphene: growth, modification and electronic properties funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/2053-1583/aa604a

Publication URI: http://dx.doi.org/10.1088/2053-1583/aa604a

Type: Journal Article/Review

Parent Publication: 2D Materials

Issue: 2

ISSN: 2053-1583