Ten-Fold Enhancement of InAs Nanowire Photoluminescence Emission with an InP Passivation Layer. (2017)
Attributed to:
GaAsP-GaAs nanowire quantum dots for novel quantum emitters
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1021/acs.nanolett.7b00803
PubMed Identifier: 28535064
Publication URI: http://europepmc.org/abstract/MED/28535064
Type: Journal Article/Review
Volume: 17
Parent Publication: Nano letters
Issue: 6
ISSN: 1530-6984