Electrical Stability Impact of Gate Oxide in Channel Implanted SiC NMOS and PMOS Transistors (2017)

First Author: Idris M
Attributed to:  Underpinning Power Electronics 2012: Devices Theme funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.4028/www.scientific.net/msf.897.513

Publication URI: http://dx.doi.org/10.4028/www.scientific.net/msf.897.513

Type: Journal Article/Review

Parent Publication: Materials Science Forum

ISSN: 02555476