Functional Oxide as an Extreme High-k Dielectric towards 4H-SiC MOSFET Incorporation (2017)

First Author: Russell S
Attributed to:  High Current Module and Technologies Optimised for HVDC funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.4028/www.scientific.net/msf.897.155

Publication URI: http://dx.doi.org/10.4028/www.scientific.net/msf.897.155

Type: Journal Article/Review

Parent Publication: Materials Science Forum

ISSN: 02555476