Heteroepitaxial Beta-Ga 2 O 3 on 4H-SiC for an FET With Reduced Self Heating (2017)

First Author: Russell S
Attributed to:  High Current Module and Technologies Optimised for HVDC funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/jeds.2017.2706321

Publication URI: http://dx.doi.org/10.1109/jeds.2017.2706321

Type: Journal Article/Review

Parent Publication: IEEE Journal of the Electron Devices Society

Issue: 4

ISSN: 21686734