Demonstrating the Instability of SiC Ohmic Contacts and Drain Terminal Metallization Schemes Aged at 300 °C (2017)

First Author: Hamilton D
Attributed to:  High Current Module and Technologies Optimised for HVDC funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.4028/www.scientific.net/msf.897.387

Publication URI: http://dx.doi.org/10.4028/www.scientific.net/msf.897.387

Type: Journal Article/Review

Parent Publication: Materials Science Forum

ISSN: 02555476