Characterization of Epitaxial Heavily Doped Silicon Regions Formed by Hot-Wire Chemical Vapor Deposition Using Micro-Raman and Microphotoluminescence Spectroscopy (2018)

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/JPHOTOV.2018.2818284

Publication URI: http://dx.doi.org/10.1109/JPHOTOV.2018.2818284

Type: Journal Article/Review

Parent Publication: IEEE Journal of Photovoltaics

Issue: 3