Theory and design of In x Ga 1- x As 1- y Bi y mid-infrared semiconductor lasers: type-I quantum wells for emission beyond 3 ยต m on InP substrates (2018)
Attributed to:
Realising a solid state photomultiplier and infrared detectors through Bismide containing semiconductors
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/1361-6641/aad2bd
Publication URI: http://dx.doi.org/10.1088/1361-6641/aad2bd
Type: Journal Article/Review
Parent Publication: Semiconductor Science and Technology
Issue: 9