The Over-Reset Phenomenon in Ta 2 O 5 RRAM Device Investigated by the RTN-Based Defect Probing Technique (2018)

First Author: Chai Z

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/LED.2018.2833149

Publication URI: http://dx.doi.org/10.1109/LED.2018.2833149

Type: Journal Article/Review

Parent Publication: IEEE Electron Device Letters

Issue: 7