Investigation of a temperature tolerant InGaP (GaInP) converter layer for a 63 Ni betavoltaic cell (2017)

First Author: Butera S

Attributed to: High Efficiency Betavoltaic Cells funded by STFC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1361-6463/aa7bc5

Publication URI: http://dx.doi.org/10.1088/1361-6463/aa7bc5

Type: Journal Article/Review

Parent Publication: Journal of Physics D: Applied Physics

Issue: 34