Effect of electric field on migration of defects in oxides: Vacancies and interstitials in bulk MgO (2018)

First Author: El-Sayed A
Attributed to:  Resistive switches (RRAM) and memristive behaviour in silicon-rich silicon oxides funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1103/physrevb.98.064102

Publication URI: http://dx.doi.org/10.1103/physrevb.98.064102

Type: Journal Article/Review

Parent Publication: Physical Review B

Issue: 6