Performance Enhancement of Al 2 O 3 /H-Diamond MOSFETs Utilizing Vacuum Annealing and V 2 O 5 as a Surface Electron Acceptor (2018)

First Author: Macdonald D
Attributed to:  Ultra short gate length diamond FETs for high power/high frequency applications funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/led.2018.2856920

Publication URI: http://dx.doi.org/10.1109/led.2018.2856920

Type: Journal Article/Review

Parent Publication: IEEE Electron Device Letters

Issue: 9