A Novel Non-Intrusive Technique for BTI Characterization in SiC mosfets (2019)
Attributed to:
Reliability, Condition Monitoring and Health Management Technologies for WBG Power Modules
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/tpel.2018.2870067
Publication URI: http://dx.doi.org/10.1109/tpel.2018.2870067
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Power Electronics
Issue: 6