Band edge states, intrinsic defects, and dopants in monolayer HfS2 and SnS2 (2018)
Attributed to:
Integration of Novel Materials in Spintronic Devices
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.5008959
Publication URI: http://dx.doi.org/10.1063/1.5008959
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 6