Impact of stress in ICP-CVD SiN x passivation films on the leakage current in AlGaN/GaN HEMTs (2018)
Attributed to:
Integrated GaN-Diamond Microwave Electronics: From Materials, Transistors to MMICs
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1049/el.2018.1097
Publication URI: http://dx.doi.org/10.1049/el.2018.1097
Type: Journal Article/Review
Parent Publication: Electronics Letters
Issue: 15