Impact of the Gate Oxide Reliability of SiC MOSFETs on the Junction Temperature Estimation Using Temperature Sensitive Electrical Parameters (2018)
Attributed to:
Reliability, Condition Monitoring and Health Management Technologies for WBG Power Modules
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ecce.2018.8557810
Publication URI: http://dx.doi.org/10.1109/ecce.2018.8557810
Type: Conference/Paper/Proceeding/Abstract