Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional AlxGa1-xN Layers. (2018)
Abstract
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Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.3390/ma11101968
PubMed Identifier: 30322130
Publication URI: http://europepmc.org/abstract/MED/30322130
Type: Journal Article/Review
Volume: 11
Parent Publication: Materials (Basel, Switzerland)
Issue: 10
ISSN: 1996-1944