Low-Loss 800-V Lateral IGBT in Bulk Si Technology Using a Floating Electrode (2018)
Attributed to:
Underpinning Power Electronics 2012: Devices Theme
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/led.2018.2831598
Publication URI: http://dx.doi.org/10.1109/led.2018.2831598
Type: Journal Article/Review
Parent Publication: IEEE Electron Device Letters
Issue: 6
ISSN: 07413106