Material Limit of Power Devices-Applied to Asymmetric 2-D Superjunction MOSFET (2018)

First Author: Kang H
Attributed to:  Underpinning Power Electronics 2012: Devices Theme funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2018.2839180

Publication URI: http://dx.doi.org/10.1109/ted.2018.2839180

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 8

ISSN: 00189383