The effect of post-growth rapid thermal annealing on InAs/InGaAs dot-in-a-well structure monolithically grown on Si (2019)

First Author: Li W
Attributed to:  Future Compound Semiconductor Manufacturing Hub funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.5085175

Publication URI: http://dx.doi.org/10.1063/1.5085175

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 13