The effect of post-growth rapid thermal annealing on InAs/InGaAs dot-in-a-well structure monolithically grown on Si (2019)
Attributed to:
Future Compound Semiconductor Manufacturing Hub
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.5085175
Publication URI: http://dx.doi.org/10.1063/1.5085175
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 13