Intrinsic point defects and the n - and p -type dopability of the narrow gap semiconductors GaSb and InSb (2019)

First Author: Buckeridge J

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1103/physrevb.100.035207

Publication URI: http://dx.doi.org/10.1103/physrevb.100.035207

Type: Journal Article/Review

Parent Publication: Physical Review B

Issue: 3