Characterization of the Interfacial Toughness in a Novel "GaN-on-Diamond" Material for High-Power RF Devices (2019)
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1021/acsaelm.8b00091
Publication URI: http://dx.doi.org/10.1021/acsaelm.8b00091
Type: Journal Article/Review
Parent Publication: ACS Applied Electronic Materials
Issue: 3