Schottky barrier height at metal/ZnO interface: A first-principles study (2019)

First Author: Chen J
Attributed to:  Integration of Novel Materials in Spintronic Devices funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.mee.2019.111056

Publication URI: http://dx.doi.org/10.1016/j.mee.2019.111056

Type: Journal Article/Review

Parent Publication: Microelectronic Engineering