Forming-Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices (2019)

First Author: Petzold S
Attributed to:  Non-equilibrium electron-ion dynamics in thin metal-oxide films funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/aelm.201900484

Publication URI: http://dx.doi.org/10.1002/aelm.201900484

Type: Journal Article/Review

Parent Publication: Advanced Electronic Materials

Issue: 10