The improvement of Mo/4H-SiC Schottky diodes via a P 2 O 5 surface passivation treatment (2020)

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.5133739

Publication URI: http://dx.doi.org/10.1063/1.5133739

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 2