Luminescence behavior of semipolar (101¯1) InGaN/GaN "bow-tie" structures on patterned Si substrates (2020)

First Author: Bruckbauer J
Attributed to:  Manufacturing of nano-engineered III-nitride semiconductors funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.5129049

Publication URI: http://dx.doi.org/10.1063/1.5129049

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 3