Analysis of Gain Variation With Changing Supply Voltages in GaN HEMTs for Envelope Tracking Power Amplifiers (2019)
Attributed to:
Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/tmtt.2019.2916404
Publication URI: http://dx.doi.org/10.1109/tmtt.2019.2916404
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Microwave Theory and Techniques
Issue: 7