Electrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum Optoelectronic Device. (2019)
Attributed to:
The Silicon Vacancy in Silicon Carbide: a promising qubit in a technological material
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1021/acs.nanolett.9b02774
PubMed Identifier: 31532999
Publication URI: http://europepmc.org/abstract/MED/31532999
Type: Journal Article/Review
Volume: 19
Parent Publication: Nano letters
Issue: 10
ISSN: 1530-6984