Demonstration of Si based InAs/GaSb type-II superlattice p-i-n photodetector (2019)
Attributed to:
High performance III-V quantum dot photodetectors for low SWaP infrared devices
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.infrared.2019.06.011
Publication URI: http://dx.doi.org/10.1016/j.infrared.2019.06.011
Type: Journal Article/Review
Parent Publication: Infrared Physics & Technology
ISSN: 1350-4495