Impact of the Input Impedance on the Linearity of Supply Modulated GaN HEMT Power Amplifiers (2019)
Attributed to:
Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.23919/eumc.2019.8910882
Publication URI: http://dx.doi.org/10.23919/eumc.2019.8910882
Type: Conference/Paper/Proceeding/Abstract