Optimization of 1.3 µ m InAs/GaAs quantum dot lasers epitaxially grown on silicon: taking the optical loss of metamorphic epilayers into account (2018)
Attributed to:
Future Compound Semiconductor Manufacturing Hub
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/1555-6611/aae194
Publication URI: http://dx.doi.org/10.1088/1555-6611/aae194
Type: Journal Article/Review
Parent Publication: Laser Physics
Issue: 12