Confocal photoluminescence investigation to identify basal stacking fault's role in the optical properties of semi-polar InGaN/GaN lighting emitting diodes (2019)

First Author: Zhang Y
Attributed to:  Future Compound Semiconductor Manufacturing Hub funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1038/s41598-019-46292-8

PubMed Identifier: 31278338

Publication URI: http://europepmc.org/abstract/MED/31278338

Type: Journal Article/Review

Parent Publication: Scientific Reports

Issue: 1

ISSN: 2045-2322