13 µm InAs/GaAs quantum dot lasers on silicon with GaInP upper cladding layers (2018)

First Author: Wang J
Attributed to:  Future Compound Semiconductor Manufacturing Hub funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1364/prj.6.000321

Publication URI: http://dx.doi.org/10.1364/prj.6.000321

Type: Journal Article/Review

Parent Publication: Photonics Research

Issue: 4