13 µm InAs/GaAs quantum dot lasers on silicon with GaInP upper cladding layers (2018)
Attributed to:
Future Compound Semiconductor Manufacturing Hub
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1364/prj.6.000321
Publication URI: http://dx.doi.org/10.1364/prj.6.000321
Type: Journal Article/Review
Parent Publication: Photonics Research
Issue: 4