Room-temperature local magnetoresistance effect in n -Ge devices with low-resistive Schottky-tunnel contacts (2019)
Attributed to:
Half-metallic ferromagnets: materials fundamentals for next-generation spintronics
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.7567/1882-0786/ab0252
Publication URI: http://dx.doi.org/10.7567/1882-0786/ab0252
Type: Journal Article/Review
Parent Publication: Applied Physics Express
Issue: 3