A comparative study of epitaxial InGaAsBi/InP structures using Rutherford backscattering spectrometry, X-ray diffraction and photoluminescence techniques (2019)
Attributed to:
Realising a solid state photomultiplier and infrared detectors through bismide containing semiconductors
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.5109653
Publication URI: http://dx.doi.org/10.1063/1.5109653
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 12