Surface Effects of Passivation within Mo/4H-SiC Schottky Diodes through MOS Analysis (2019)

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.4028/www.scientific.net/MSF.963.511

Publication URI: http://dx.doi.org/10.4028/www.scientific.net/MSF.963.511

Type: Journal Article/Review

Parent Publication: Materials Science Forum