Donor and acceptor characteristics of native point defects in GaN (2019)
Attributed to:
HPC simulations of complex solids and clusters using static lattice techniques
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/1361-6463/ab2033
Publication URI: http://dx.doi.org/10.1088/1361-6463/ab2033
Type: Journal Article/Review
Parent Publication: Journal of Physics D: Applied Physics
Issue: 33