Stacking fault-associated polarized surface-emitted photoluminescence from zincblende InGaN/GaN quantum wells (2020)
Attributed to:
Fundamental studies of zincblende nitride structures for optoelectronic applications
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/5.0012131
Publication URI: http://dx.doi.org/10.1063/5.0012131
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 3