Electronic Structure and Optoelectronic Properties of Bismuth Oxyiodide Robust against Percent-Level Iodine-, Oxygen-, and Bismuth-Related Surface Defects (2020)

First Author: Huq T
Attributed to:  Equipment Account: Integrated Thin Film Deposition and Analysis System funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/adfm.201909983

Publication URI: http://dx.doi.org/10.1002/adfm.201909983

Type: Journal Article/Review

Parent Publication: Advanced Functional Materials

Issue: 13