Enhanced piezoelectricity and electromechanical efficiency in semiconducting GaN due to nanoscale porosity (2020)
Attributed to:
Centre for Advanced Materials for Integrated Energy Systems (CAM-IES)
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.apmt.2020.100858
Publication URI: http://dx.doi.org/10.1016/j.apmt.2020.100858
Type: Journal Article/Review
Parent Publication: Applied Materials Today