Influence of an InGaN superlattice pre-layer on the performance of semi-polar (11-22) green LEDs grown on silicon. (2020)
Attributed to:
Monolithic On-chip Integration of Electronics & Photonics Using III-nitrides for Telecoms
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1038/s41598-020-69609-4
PubMed Identifier: 32724185
Publication URI: http://europepmc.org/abstract/MED/32724185
Type: Journal Article/Review
Volume: 10
Parent Publication: Scientific reports
Issue: 1
ISSN: 2045-2322