Design Optimization of 1.2kV 4H-SiC Trench MOSFET (2019)

First Author: Dai T
Attributed to:  Underpinning Power Electronics switch optimisation Theme funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.4028/www.scientific.net/msf.963.605

Publication URI: http://dx.doi.org/10.4028/www.scientific.net/msf.963.605

Type: Journal Article/Review

Parent Publication: Materials Science Forum