Development of High-Quality Gate Oxide on 4H-SiC Using Atomic Layer Deposition (2020)
Attributed to:
Ultra-high voltage (>30KV) power devices through superior materials for HVDC transmission
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Publication URI: https://doi.org/10.4028/www.scientific.net/MSF.1004.547
Type: Conference/Paper/Proceeding/Abstract
Volume: 1004