Resistive switching behavior of solution-processed AlOx and GO based RRAM at low temperature (2020)

First Author: Qi Y

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.sse.2019.107735

Publication URI: http://dx.doi.org/10.1016/j.sse.2019.107735

Type: Journal Article/Review

Parent Publication: Solid-State Electronics