Effect of Annealing Temperature for Ni/AlOx/Pt RRAM Devices Fabricated with Solution-Based Dielectric. (2019)
Attributed to:
Mechanisms and Control of Resistive Switching in Dielectrics
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.3390/mi10070446
PubMed Identifier: 31269730
Publication URI: http://europepmc.org/abstract/MED/31269730
Type: Journal Article/Review
Volume: 10
Parent Publication: Micromachines
Issue: 7
ISSN: 2072-666X