Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices (2020)

First Author: Cai Y
Attributed to:  High permittivity dielectrics on Ge for end of Roadmap application funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/access.2020.2995906

Publication URI: http://dx.doi.org/10.1109/access.2020.2995906

Type: Journal Article/Review

Parent Publication: IEEE Access