Effect of surface treatment on electrical properties of GaN metal-insulator-semiconductor devices with Al 2 O 3 gate dielectric (2020)

First Author: Cai Y
Attributed to:  High permittivity dielectrics on Ge for end of Roadmap application funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.35848/1347-4065/ab7863

Publication URI: http://dx.doi.org/10.35848/1347-4065/ab7863

Type: Journal Article/Review

Parent Publication: Japanese Journal of Applied Physics

Issue: 4